2N6057 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

£s.m.i-don.au.ckoi LPioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
DARLINGTON COMPLEMENTARY
SILICON-POWER TRANSISTORS
...designed lor general-purpose power amplifier and low frequency
switching applications
FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain -
hFE = 3500(typ)<&lc
MAXIMUM RATINGS
Characteristic
Symbol 2N6050 2N6051 2N6052 Unit
2N6057 2N60S8 2N6059
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
VCEO
60
80
100
V
VCBO
60
80
100
V
"no
5
V
12
A
'c
20
Base Current
'B
Total Power Dissipation©^ 25°C _PO
Derated above 25°C
0.2
150
0.857
A
W
W/°C
Operating and Storage Junction
L -T.TO
°C
Temperature Range
-65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case Rejc
1.17
"C/W
FIGURE-1 POWER DERATING
175
150
125
100
75
50
25
2S 50 75 100 125 150 175 200
T0 , TEMPERATURE(« C)
TELEPHONE: [phone]
[phone]
FAX: [phone]
PNP NPN
2N6050 2N6057
2N6051 2N6058
2N6052 2N6059
DARLINGTON
12AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-100 VOLTS
150 WATTS
TO-3
PIN 1.BASE
2-EM(TTER
COLLCCTOR4CASE)
MILLIMETERS
DM
MIN MAX
A 38.75 39.96
B 19.28 22.23
C
7.96 9.28
0 11.18 12.18
E 25.20 26.67
F
0.92 1.09
G
1.38 1.62
H 29.90 30,40
I 16.64 17.30
J
3.88 4.36
K 10.67 11.18
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice intbrmation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ
Semi-Conductors encourages customersto verify that datasheets are current before placing orders.
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