2N5991 Datasheet, PDF (1/2 Pages) Motorola, Inc – 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

^mi-Conductor <Piodueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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HIGH POWER PLASTIC
COMPLEMENTARY SILICON POWER TRANSISTORS
... designed for use In general-purpose amplifier and switch ing circuits.
• Collector Base Voltage - VCBO = 60 Vdc - 2N6986. 2N5989
• 80 Vdc - 2N6987
- 100 Vdc - 2N5988, 2N5991
• Collector-Emitter Voltage - VCEO - 40 Vdc - 2N5986, 2N5989
= eO Vdc - 2N5987
= 80 Vdc - 2N5988, 2N5991
• DC Current Gain -
hr-E = 20-120 9 > l c - 6 - 0 Adc
= 7.0 (Mini <s> Ic " 12 Me
• Collector-Emitter Saturation Voltage -
) = °-7 Vdc (Ma*> @ 'C • 6.0 Adc
•MAXIMUM RATINGS
Bating
Collector-BaM Voltage
Collector-Emitter Voltage
F miller Basa Voltage
Collector Current - Continuous
Peak
Bale Current
Total Power Diisipationffl>TC • 25°C
Derate above 25°C
Operating and Storaoe Junction
Temperature flarigft
Symfaal
VCB
VCEO
VEB
ic
2NS9S6
2N5989
60
4O
2N5987
80
EO
5.0
12
20
2N5988
2N5991
too
80
>B
4.0
FO
100
08
TJ, T,,,
-6510 '150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Wain
w/°c
°c
THERMAL CHARACTERISTICS
Cherecterirtic
Symbol
Mm
Unit
Trivrrdal Hnittance, Junction ID COM
«JC
1.25
°C/W
• Indicate* JEDEC R»ghiered Oiu
FIOUflE 1 -POWER DERATING
\(_s\
V
\
S
\ l«
1
6Q BO 100 l!0 tl
TC. CMC riMfIIATum I»C1
2N5986, 2N5987
2N5988
NPN
2N5989, 2N5991
12 AMPERE
TOWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80 VOLTS
100 WATTS
STYlE ?;
flu i
PIN 1. EMITTER
—LJL
2. COLLECTOR
3. BASE
NOTES:
1. DIM "D" UNCDNTflOtLEO IN ZON£ "H"
2. DIM "F"OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
< LEAOSV»ITHINOJ05"BADOFTnUE
POSITION (Tf) AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN MAX
INCHES
MAX
16. U
0.635
131? ^12.83 0.495 osoT
3.1?
ES
0.043
5.131
OjM}
351 T7T OJM"
no? ^{<; ssc}
T67 -
TdiT
IMS
YP
4.70.
131
W
TYT
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