2N5902 Datasheet, PDF (1/2 Pages) Intersil Corporation – MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N5902-2N5909
Monolithic Dual N-Channel JFET
General Purpose Amplifier
FEATURES
• Tight Tracking
• Good Matching
PIN CONFIGURATION
raw
ABSOLUTE MAXIMUM RATINGS
OA=25'C unless otherwise specified)
Oats-Drain or Gats-Source
Voltage (Mots 1)
Gate Current (Note 1)
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10«ec)
-40V
10mA
-65'C to +200*C
-55"C to H-150°C
+300*0
One Side Both Side*
Power Dissipation
367mW EOOmW
Derate above 26-C
3mW/*C 4mW/'C
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ORDERING INFORMATION
TO-99
2N6902
2N5903
2N5904
2N5905
2N5906
2NS907
2NS908
2N6909
ELECTRICAL CHARACTERISTICS (TA - 2S°C unless otherwlss specified)
Symbol
Parameter
IGI-IGS!
Differential Gate Current
Teat Condition*
VDG-IOV, 2N5902-5
lD = 30(iA,
TA=126'C 2NS906-9
2N6902-6 ZN5903-7 2N6904-8 2NS905-9 _Units
Mln Max Mln Max Mln Max Mln Max
2.0
2.0
2.0
2.0
0.2
0.2
0.2
0.2 ^nA
BSS1
IDSSJ
Ifti
9lsi
Saturation Drain Current Ratio VDS=10V,Vas-0
Transconductance Ratio
f«lkHz
0.95 1
0,97 1
IVQSl-Vaszl Differential Gate-Source Voltage
5
AlVasi-Vasal Gate-Source Voltage Differential V[X3-10V, TA=25'C
4T
Drift (Measured at end points 0-30(*A TB-iasQc
6
TAandTB)
TA--55'C
TB-26'C
5
9oBl-Oe<zI ^{Differential Output Conductance}
f- 1kHz
0.2
0.95 1
0,97 1
5
10
10
o,s
0,95 1
0.95 1
10
20
20
0.2
0.96 1
0.9S 1
15 mV
40
(tV/'C
40
0.2 _M»
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