2N5666S Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Devices
2N5664 2N5665
Una.
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[phone]
FAX: [phone]
Devices
2N5666 2N5667
2N5666S 2N5667S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
ta> TA = +25°C
<aTc=+1000C
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3 raW/°C for TA " +25°C
2) Derate linearly 6.9 mW/°C for TA '•• +25°C
3) Derate linearly 300 mW/°C for Tc >+100°C
4) Derate linearly 1 50 mW/°C for Tc • +100°C
Symbol
VCEO
VCBO
VEBO
IB
Ic
PT
Tj. Tstg
2N5664 2N5665
2N5666, S 2N5667, S Unit
200
300 Vdc
250
400
Vdc
6.0
Vdc
1.0
Adc
5.0
Adc
2NS664 2IN5666, S
2N5665
2.5 (1)
30 «>
2N5667, S
1.2(2)
W
I5H)
W
-65 to +200
°C
ELECTRICAL CHARACTERISTICS (Tc= 25°C unless otherwise noted)
Characteristics
I Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IL- = 10 mAde
2N5664. 2N5666, S
2N5665. 2N5667. S
VfBRXTER
Emitter-Base Breakdown Voltage
IE = 10 uAdc
Collector-Emitter Cutoff Current
V(BR)EBO
VCE = 200 Vdc
2N5664. 2N5666, S
ICES
VCE = 300 Vdc
2N5665. 2N5667. S
| Min.
250
400
6.0
TO-66*
2N5664, 2N5665
X-w
TO-5*
2N5666, 2N5667
TO-39*
2N5666S, 2N5667S
*See appendix A for
package outline
Max. | I'nit
Vdc
Vdc
0.2
(jAdc
0.2
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