2N5611 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed to66 Metal Package.

^zmL-Conductoi {Pioducti, fine.
20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N5611
DESCRIPTION
• DC Current Gain-
: hFE= 30-90@lc= -2.5A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=-100V(Min)
• Complement to Type 2N5612
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=251C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-5
A
PC
Collector Power Dissipation@Tc=25 C
25
W
Tj
Junction Temperature
150
C
Tag
Storage Temperature
-65-150 C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-o
Thermal Resistance.Junction to Case
1
MAX
6,0
UNIT
c/w
TELEPHONE: [phone]
[phone]
FAX: [phone]
PIN I BASE
2. B/IITTER
3. COLLECT OR (CASE)
TO-66 package
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JM MIN MM
A _{31 40 31 SO}
E 17.30 17,70
•:
6.70 7.10
D 0.70 0.90
__£__ 1.40 1.60
5.08
H
2.54
K 9.80 10.20
L 14.70 14.90
H.. ^{12.40- 12.60}
3.&0
i, _{24.30 24, SO}
V
3, SO
3.70
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information rum.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goina to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use ISII
Semi-Conductors encourages customers to verify rhat datasheets are current before plncing orders.
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