2N5452 Datasheet, PDF (1/2 Pages) Intersil Corporation – DUAL N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, fine.
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2N5452-2N5454
Dual N-Channel JFET
General Purpose Amplifier
GENERAL DESCRIPTION
Matched FET pairs lor differential amplifiers. This family
of general purpose FETs Is characterized for low and medi-
um frequency differential amplifier applications requiring low
drift and low offset voltage.
PIN CONFIGURATION
TO-71
,,-MM \l 0, '
6037
ORDERING INFORMATION
FEATURES
• Low Olfset Voltage
• Low Drift
• Low Capacitance
• Low Output Conductance
ABSOLUTE MAXIMUM RATINGS
(TA-26°C unless otherwise noted)
Gate-Source or Gate Drain Voltage
(Note 1)
-50V
Gate Current (Note 1)
Storage Temperature Range
60mA
-65'C to + ZOO'C
Operating Temperature Range
- SS'C to +150'C
Lead Temperature (Soldering, 10aec)
-I- 300'C
One Side Both Sides
Power Dissipation (Tc - 85'C) .. 250mW
500mW
Derate above 25'C
2.9mW/'C 4.3mW/°C
NOTE: Satttei stxvf those I/sled under "Absolute Mm/mum Ratings"
may cause permanent damage to the device. These are stress ratings only
and functional off/alien of uie device it these er any other eonditimf
ibovethoielridhatedhtheapeistJonaliectcniotlliespecttlcetlaratanat
Implied. Exposure to absolute iroMnum fating mndXcns lor extendedperi-
ods may affect device retlau/ltf.
ELECTRICAL CHARACTERISTICS (TA-250C unless otherwise specified)
Symbol
Param*tir
Taat Condition!
loss
BVass
VescoH)
Vas
VGSIO
less
Gate Havana Currant
TA=160°C
Cote-Source Breakdown
Voltage
Gate-Source Cutoff Voltaga
Gate-Source Voltage
Gate-Source Forward Voltage
Saturation Drain Current
Vas«--30V.VDS=0
Vrj8-0,l8=-1|»A
Vus=20V, !D-lnA
VD3-20V, lo^SOjiA
Vos-o.ia=imA
VDS-MV.VQS-O
2N64S2
Mln
Max
-100
-200
2NK453
Mln Max
-100
_200
-60
-SO
-1
-0.2
0.6
-4.E
-1
-4.5
-« -0.2 -4.2
2
2
5.0
0.5
5.0
2N6454
Mm Max
Unite
-100^ pA
-200
nA
-50
-1 -4.5
V
-0.2
-4.2
2
0,6
5.0
mA
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