2N5000 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-P-N SILICON POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lf nc.
TELEPHONE: [phone]
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TYPES 2N4998, 2N5000, 2NS148, 2N5150
N-P-N SILICON POWER TRANSISTORS
HIGH-FREQUENCY POWER TRANSISTORS WITH
COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
For Complementary Ute With 2N4999,2N5001, 2N5147, and 2N6149
6 mJ Revert* Energy Rating with IQ - 6 A and 4 V Ravarta Bias
•mechanical data
IN4MB, ZNMM ALL TERMINAL* ARE INSULATED FROM THE CASE
ALL JEDEC TO-SB DIMENSIONS AND NOT8S ARE APPLICABLE
NOTES;
A, Within txii dlmantlpn. MM dlamatw may vary.
B. Position of twmlnalt with ratpact to haxagon It not controlled.
C. Tha eat4 tamparaiura may ba maaaurad anywhara on tha mtlng plana within
O.IZSInch of th>nud.
D. All dlman.loni <ra In Inehat unlaat otnarwM ipaolflad.
2N514E, 2N81BO THE COLLECTO R 1$ IN ELECTRICAL CONTACT WITH THE CASE
ALL bIHINtlONi *•« IN IHCHtl
UHLI1I OTHIIVIII VtCIPIIa.
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
absolute maximum ratings at 25°C case temperature (unleu otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage (Set Not* 1)
Emitter-Bale Voltage
Continuous Collector Current . . ,
Peak Collector Current (Sea Note 2) .
Continuous Base Current
Safe Operating Areas
Continuous Device Dissipation at 50°C Case Temperature (See Note 3)
Continuous Device Dissipation at 100°C Case Temperature (See Note 3)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 4)
Undamped Inductive Load Energy (See Note 5)
Operating Collector Junction Temperature Range
Storage Temperature Range
Lead or Terminal Temperature 1/8 Inch from Case for 60 Seconds
2N4998 2N5148
2NSOOO 2NS150
. . •« 100 V* ••
. . « 80V f
. . « 6V »
2 A'
2 A'
5 A'
SA*
1 A'
1 A'
Sea Figures 7* and B
30 W*
6W*
20 W
4W
2W
1W
+ ^emJ-^—•
-65°C to 200°C*
-65°C W200°C*
• 300°C* »•
NOTES: 1. Thli value IppllMwhtn thl DM«-»mlit«r diode i» Qpvn-circuiHd.
2. Thit v*lu« ipplln for tw < B.3 mt, duty cvcl* < 1 %•
3. For optritlon abttva (or b«low) 5O°C CM! Mmpiraturv, r«1»r to DlHlpvtion Darkling CurvM Flgur» 9 and 10.
4. o*r»u llnHrly to 200°C fr«*-«lr timpcratvr* it tr>« r«t* of M.d mw/^C Tor 2NA9fia and ZNaadO, S.7 mW/'c for 2N514B ind
2N91EO.
B. This ritlng It p«Md on tft* eap*blllty ol th« trtntlnort to opwat* Hf«lv in thi unclampad indufitlw* load circuit ot Stctlon 3.2 of
th. forthcoming J6DEC publication Sufgtsltd Standards on Power Tnrutuonl. L-o.4BmH, RBB1-2Qn. Hgu-100(),
V B B I - I O v. v B B j - 4 V.HI,-0.1 n, vcc- 10 v, ICM - • *• energy - \f3ui.
'JEOEC raglttarad data. Thla data thaat contalni all applieabla ragistarad data In affaet at tha tlma of publication.
TThl* circuit appaan on pag« B-1 of thlt data book.
NJ Semiconductors reserves the nght to change test conditions, parameters limits and package dimensions without
not,ce mfonnation ftim.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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