2N4445 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Field Effect Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
2N4445 - 2N4448
Silicon Epitaxial Junction
N-Channel Field Effect Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
• LOW R D S - 4 OhmsTYPICAL
• LOW COD - 15 pfd TYPICAL
• HIGH loss - 400mA TYPICAL
ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain to Gate Voltage
GaM to Source Voltage
Peak Forward Gata Currant
Peak Drain Currant
Power Dissipation (frc« air)
Derating Factor (fr«« air)
Junction Tamp. (Opir. & Store)
teed Temp. (9 1/16" ± 1/32" from case)
SYMBOL
BVoao
BVaso
lap
ID
Po
DP
TJ
TL
2N 2N 2N 2N
4445 4446 4447 4448
25 26 20 20
-25 •25 •20 •20
100 100 100 100
400 400 400 400
400 400 400 400
2.3 2.3 2.3 2.3
-65°C to «200°C
240°Cfor10iec.
UNITS
Volts
Volts
mA
mA
mW
mW/°C
ELECTRICAL CHARACTERISTICS: TA - 25°C (UNLESS OTHERWISE STATED)
PARAMETERS AND
CONDITIONS
Gata Leakage Current
VQS-15V. Vos = 0
Gate Leakage Current
Vos = 16V, Vos = 0, TA • 100°C
Drain Cutoff Current
Vos--10V,Vos =5V
Drain Cutoff Current
Vos » -10V, Vos - 6V, TA 100°C
Pinch-Off Voltage
Vos - 6V, IDS 3nA
On Raslitance
VDS • 0,1V, Vos = 0
Dr.aln-Source "On" Voltage
lo «• 10mA, Vos * 0
Drain Current*
Vos • 2V, Vos= 0
Gate to Source Cap.
Vos - 20V
Gata to Drain Cap.
Voo = 20V
Turn On Time1
Turn Off Time1
SYMBOL
2N444S
2N4446
2N4447
2N4448
Min, Typ Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. ^UNITS
lass
loss
ID OFF
ID OFF
_ „ _3.0 ™ _ _3.0 _ _ _3.0 _ „ _{3.0 nA}
-
— ^0.6
_
— _0.6
-
— ^0.6
-
_
0.6 *iA
_
_ _3.0
_
_ _3.0
_
_
3.0
_
„ _{3.0 nA}
_
_
0.6
„ _. _0.6
_
_ _0.6
_
_ _{0.6 f/A}
VPO
2.0 7.0 10 2.0 7.0 10 2.0 7.0 10 2.0 7.0 10 Volts
Ros
Vos (On)
loss
- X 4.0 5.0
— ^{_ 50}
150 - -
— _{7,0 10}
_ ^_ _too
100 ^{_ _}
- _{4.0 6.0}
_ _' ₆₀
_
150
_
-^ _{7.0 12 Ohms}
— -_ _{120 mV}
100 ^{_ _} mA
Cos
_ _{18 25} — _{18 25} _ _{18 25} _ _{18 25 pfd}
Coo
Td+Tr
Ts+Tf
_ _{18 25}
- 35 -
- 35 -
_ _{18 25}
- 35 -
- 35 -
_ _{18 25}
- 36 -
- 35 -
_ _{18 25 pfd}
- 36 - nS
- 35 - nS
'Pulu Measurement 1% Duty Cycle tO MS Max.
_ 'R_Q - 50O, Voo - 1.6V, Ho =• 150 O, V pul» - -10V,Pulse width 0.5»is min.. Vos - 0V
NJ Semi-Concluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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