2N3838 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line,
Devices
2N3838
2N4854
2N4854U
TELEPHONE: [phone]
[phone]
FAX: [phone]
MAXIMUM RATINGS
Ratings
Sym 2N3838®
2N4854, U Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
Ic
40
60
5.0
600
One Total
40
60
5.0
600
One Total
Vdc
Vdc
Vdc
mAdc
Trans Devic Trans Device
e
Total Power Dissipation @ TA = +25°C
@TC=+25°C(1)
PT
0.25'2' 0.35 0.30(3> 0.60
07«)
1.4 1.0'"
2.0
W
W
Operating & Storage Junction Temp. Range _Tj
200
°C
Operating & Storage Junction Temp. Range _Tsta
Lead to Case Voltage
-55 to +200
°C
±120
Vdc
1) Tc rating do not apply to Surface Mount devices (2N4854U)
2) For TA > +25°C Derate linearly 1.43 mW/°C (one transistor) 2.00 mW/°C (both transistors)
3) For TA > +25°C Derate linearly 1 .7 1 mW/°C (one transistor) 3.43 mW/t (both transistors)
4) For Tc > +25°C Derate linearly 4.0 mW/°C (one transistor) 8.0 mW/°C (both transistors)
5) For Tc > +25°C Derate linearly 5.71 mW/°C (one transistor) 1 1,43 mW/°C (both transistors)
ELECTRICAL CHARACTERISTICS (TA = 2S°C unless otherwise noted)
Characteristics
JJjTnbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
Ic = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc
Collector-Base Cutoff Current
V(BR)CEO
40
IcBO(l)
VCB = 50 Vdc
2N3838
2N4854. U
ICBOO
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
VEB = 3.0 Vdc
TO-78*
2N4854
6 Pin Surface Mount*
2N4854U
I
1
_1
6 Lead Flatpack*
2N3838
•See MILPRF19500/421
for package dimensions.
Max.
Unit
DC
10
(oAdc
50
TjAdc
10
10
jjAdc
10
r)Adc
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