2N3496 Datasheet, PDF (1/2 Pages) Continental Device India Limited – PNP SILICON PLANAR SWITCHING TRANSISTORS

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
2N3494
2N3495
CASE 31-03, STYLE 1
TO-39 (TO-205AD)
2N3496
2N3497
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
ic
Total Device Dissipation (a, TA = 25°C
PD
Derate above 25°C
Total Device Dissipation (ri TC = 25°C*
PD
Derate above 25'C
Operating and Storage Junction
Temperature Range
TJ. Tstg
'Indicates Data in addition to JEDEC Requirements.
2N3434 2N349S
2N3496 2N3497
80
120
80
120
45
150
2N3494 2N3496
ZN3495 2N3497
600
400
3.43
2.28
3.0
1.2
17.2
6.85
-65tc + 200
i
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW*°C
Watts
mW'"C
C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageU)
|lc - 10 mAdc, IB = 0}
2N3494, 2N3496
2N3495, 2N3497
Collector-Base Breakdown Voltage
UC = 10 uAdc, IE =• 0)
2N3494, 2N3496
2N3495. 2N3497
Emitter-Base Breakdown Voltage
(l£ = 10 fiAtic, Ic = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0|
(VCB = 90 Vdc, If = O)
2N3494, 2N3496
2N3495, 2N3497
Emitter Cutoff Current
(VBE = 3.0 Vdc, ic = o)
ON CHARACTERISTICS
DC Current Gain(l)
(lc - lOO^Adc. VCE = 10Vdcl
dC = 1.0 mAdc, VCE - 10 Vdcl
(lc = 10 mAdc. VCE = 10 Vdc)
dC = 50 mAdc. VCE = 10 Vdcl
(1C = 100 mAdc, VCE = 10 Vdcl
2N3494, 2N3496
Collector-Emitter Saturation Voltage
(1C = 10 mAdc, IB = 1.0 mAdc]
2N3494, 2N3496
2N349S, 2N3497
Base-Emitter Saturation Voltage
dC = 10 mAdc, lg = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain — Bandwidth ProductlZ)
(IC - 20 mAdc, VCE = '° Vdc, f = 100 MHz)
2N3494. 2N3496
2N3495, 2N3497
Output Capacitance
(VCB = 10 Vdc, IE = 0. f = 100 kHz)
2N3494, 2N3496
2N3495, 2N3497
Input Capacitance
(VBE = 2-°vdc' ic = o. ' = ino kHz)
Symbol
Min
V|BR|CEO
80
120
V(BR)CBO
80
120
V(BR)EBO
45
'CBO
-
!EBO
—
MM
-
—
—
100
100
25
"FE
vCEIsat)
vBE(satl
fr
cobo
Qbo
35
__
40
40
40
35
—
—
0.3
—
0.35
0.6 I 0.9
i
200
150
—
—
7.0
—
6.0
-~*
30
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
_
Vdc
Vdc
MHz
pF
pF
Quality Semi-Conductors