2N3390 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

^E.mi-ConcLu.cto'i ZPioducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N3390
2N3391
2N3391A
2N3392
2N3393
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TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. f
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VcBO
VEBO
k
TJ, Tsta
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
25
25
5.0
500
-55 to +150
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
O
Symbol
PD
Rejc
RWA
TA = 25°C unless otherwise noted
Characteristic
Max
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3390 / 3391/A / 3392 / 3393
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
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