2N3350 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – Doubles transistors PNP silicium Planar epitaxiaux

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Doubles transistors PNP silicium
Planar epitaxiaux
Dual PNP silicon transistors
Epitaxial plmir
* 2N 3350
*2N 3351
*2N 3352
• Amplification diffSrentielle
Differential amplification
Transistors comptementaires
aux 2N 2642 a 2N 2644
Complementary transistors
of 2N 2642 to 2N 2644
Dissipation de puissance maximale
MmiiKUH ,
B
VCEO
'c
h21E(10MA)
-46 V
-30 mA
100 - 300
h21E1
h21E2
0,9 min. 2N 3350
0,8 min, 2N 3351
0,6 min. 2N 3352
Bottler F 100
Cast
150 200 lco,,CC)(3)(4)
*tfl
B?
Valeurs limites absolues d'utilisation a tamb=25°C
Absolute ntinffs (limiting vtluttt
( Sauf indications contrairos )
iUnliss atarwin sftalitil}
•rW ^^V^P^V^n^*
fn*m**r
Tension collactaur-bua
Cotlfctor>t>»lf volttgm
Tension collecteur-emetteur
Calltctor-tmlltn volum
Tension 4metteur-base
fmitur-tiit relttgt
Courant collecteur
Collector cvrrtrtt
VCBO
-60
V
VCEO
-45
V
VEBO
-6
V
pc
-30
mA
t ._ =.2S»C 1 **ment (1)
0,3
W
Dissipation de puissance
Powir dliitpition
2 4l*ment! <2>
Ptot
0,6
t =25«C T^171"1* <3>
0,6
W
2 elements (4)
1,2
Temperature de jonction
Junction ttmptwiun
max'
*i
175
°C
Temperature de stockage
Storage tmmpertturm
min
max.
'stg
-65
°C
+200
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