2N3347 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – Doubles transistors PNP silicium Planar epitaxiaux

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Doubles transistors PNP silicium
Planar epitaxiaux
Dual PNP silicon transistors
Epitaxial planar
*2N 3347
*2N 3348
*2N 3349
Amplification differentielle faibla bruit
Low noise differential amplification
• Transistors compl6mentaires aux
2N 2639 a 2N 2641
Complementary tnnsistors of
2N 2639 at 2N 2641
Dissipation da puissance maximale
Mafimum ppurtr
VCEO
'c
ti2iE(10 /^A!
h21E1
h21E2
-45 V
-30 mA
40 300
( 0,9 min. 2N 3347
J 0,8 min. 2N 3348
( 0.6 min. 2N 3349
Boitier F 100
Cut
•d
lombCC) (I) (2)
50 100 150 200 leas,(°C) (3) Ml
Valeurs limites absolues d'utilisation a tarnb=25°C .
.
Aisotuti ritingt I'limiting nluis)
( Sauf indications contrairas)
'
lUn/tsi mhtruitf sftdliid)
futoMn
t^fmjmt&f
•' .
'' >:
Tension collecteur-base
Coffector-bttt voltigf
Tension collecteur-imetteur
CoHtctar-tmitttf volttft
VCBO
-60
V
VCEO
-45
V
Tension emetteur-bau
Emittmr-bmst vottagt
VEBO
-8
V
Courant collecteui
Collector current
'c
-30
mA
t
a.e 1 »l«ment (1)
0,3.
Dissipation deouissance •rnb
Fowir datipition
n
24l*n»nu(2)
1 4l«ment (3)"
Ptot
r~ 0,6
S,6
W
'e»» •" *- 2 4l*i7»nt» 14)
1.3T
Temperature dejonction
Junction t»mp»r*turt
li
175
°C
Temperature de stockage
Storage ttm-pertture
min •
max.
'«9
- 65
+200
<>c
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