2N3110 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO39

20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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NPN2N3108-2N3110
GENERAL PURPOSE AMPLIFIERS
AND SWITCHES
The 2N3108 and 2N3110 are NPN transistors mounted in
TO-39 metal package.
Thev are intended for large signal, low noise industrial applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
Ic
PD
Tj
Tsta
Collector-Emitter
Voltage
IB=0
Collector-Base Voltage IE=0
Emitter-Base Voltage lc=0
Collector Current
Total Power Dissipation Tamb ~ 25°
T_{i case -}- _£7₃^°
Junction Temperature
Storage Temperature range
Value
2N3108
2N3110
60
40
100
80
5
1
0.8
5
-65 to +150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
219
35
Unit
V
V
V
A
W
°C
Unit
°c/w
°c/w
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notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N I
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