2N2991 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – The CENTRAL SEMICONDUCTOR 2N4391 series

nc,
20 STERN AVE.
TELEPHONE: [phone]
SPRINGFIELD, NEW JERSEY 07081
[phone]
U.S.A.
HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS
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• 15 Watts at 100°C Case Temperature
• Typ VCE,,at) of 0.2 V at 200 mA
• Typ VBE of 0.8 V at 200 mA
• Typ fT of 50 MHz at 10 V, 100 mA
* mechanical data
2N2987 oito
THRU
°"°
1 5 MIN M
_ TEMf E«ATU«
-_^ MCAS POINT (
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^ COLLICTOI
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THE COLLECTOR IS IN ELECTRICAL
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0 100 MIN —>~- H-o4s|
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CONTACT WITH THE CASE
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ALLJEDEC TO-5 DIMENSIONS
3 LEADS 3.ASE/ ^45'^V ' °"""
AND NOTES ARE APPLICABLE
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All OIM1NSIONS ill
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CASE TEMPERATURE IS MEASURED 0.144 INCH ± 0.010 INCH DOWN FROM TOP OF CAN
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2N2991
THRU
2N2994
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THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
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POSITION OF THELEADS IN RELATION
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T0 THE HEX IS NOT CONTROLLED
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MAXIMUM RECOMMENDED MOUNTING
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absolute maximum ratings at 25°C case temperature (unless otherwise noted)
2N2987 2N2988 2N2991 2N2992
2N2989 2N2990 2N2993 2N2994
* Collector-Base Voltage
95 V 155 V 95V 155V
* Collector-Emitter Voltage (See Note 1)
80V 100 V 80V 100V
* Emitter-Base Voltage
» Continuous Collector Current
-<
7V
>•
-<
1A
•*-
Peak Collector Current (See Note 2)
-4
1.5 A
* Continuous Base Current
-<
0.2 A
Safe Operating Region at (or below) 100°C Case Temperature . . . .
SeeFigure 10
* Continuous Device Dissipation at (or below) 100°C Case Temperature
(See Note 3)
-<
* Continuous Device Dissipation at (or below) 25°C Free-Air Temperature
15 W
—
(See Note 4)
-<— 1 W —>• -< 2 W
* Operating Case Temperature Range
^
-o5°C to 200°C
4 Storage Temperature Range
-^
-65°C to 200°C
* Lead Temperature Y\<> Inch from Case for 10 Seconds
^
230°C
NOTES: 1. This value applies between 1mA and 30 mA collector current when the bait-emitter diode ii open-circuited.
2. Thii volue oppliei foe lp < 0,3 mi, duty cycle < 10%.
3. Derate linearly to 200°C caie temperature at the rale of ISO mW/deg.
4 Derate linearly to 200°C free-air temperature at the rale of 5.7 mW/deg for the 2N2987 through 2N2990 and 11.4 mW/deg for the 2N2991 through 2N2994.
Quality Semi-Conductors