2N2196 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Transistors NPN silicium Planar epitaxiaux

ne.
20 STERN AVE.
SPRINQRELD, NEW JERSEY 07081
U.SA
TELEPHONE: [phone]
[phone]
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Transistors NPN silicium
Planar epitaxiaux
NPN silicon transistors
Epitaxial planar
2N 2196
2N2197
• Amplification BF grands signaux
Large signal LF amplification
• Commutation
Switching
Dissipation dg puittunce maximal*
'tor
IW)
IS
Dispositif recommande
frtttnd dnice
Donnees principales
friaciftl ftituns
VCER
60 V
'c
1A
ptot
h21E(0,2 A)
15 W
/ 30 - 90
175 -200
2N 2196
2N 2197
Boitier F88
Cist
EBC
Le collecteur est relie* au boitier
Collector it connected to case
Valeurs limites absolues d'utilisation atcase=25°C
Absolut* ratings (limiting viluts)
( Saul indications contraires
(Unltts OtAirtvis* spfci/ffd}
Pwiirtttw
rM ff^bH^H^Iff^^fff
-i
Tension collecteur- base
GoHtctOf-bfi* vottag*
VCBO
80
V
Tension collecteur-6metteur
CotltctOf-fmitttr voltage
R t ^^
°c ^
VCER
60
V
Tension gmetteur-base
emitttr-batf voltage
VEBO
8
V
Courant collecteur
Collector current
'c
1
A
Courant base
&9t* Currant
n _{D.issi.pa,ti.on d.e puis.sanca}
P^,rd,;,iP,t,-on
Temperature de jonction
Junction ttmpvriturf
Temperature de stockage
Storage temperature
W25_-C _ift1_rtC _o^ <1_—>
'caso-gs.c'2'
max
min
max.
'B
Ptot
li
'«g
0,5
A
2
10
W
IS
175
«C
- 65
+ 175
»c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Cnniliictors is believed to be both accurate and reliable at the time ol'going to press. Hm\ever NJ
Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N.I Semi-Conductors encourages
customer; to verif'v that datasheets are current before placing orders.