2N156 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA p|Ap CERMAmUM
TELEPHONE: [phone]
[phone]
FAX: [phone]
JUNCTION POWER TRANSISTORS
Conforming in all respects to the latest EIA configuration, these devices fit within the
standard TO-13 case outline and have matched glass-to-metal seals. These transistors,
designed for maximum performance and reliability, may be used in a variety of applica-
tions including relay control and servo amplifiers as well as low speed switching oscil-
lators and audio power applications.
The combined features of welded cases and hermetically sealed glass-to-metal terminals
provide maximum protection against environmental extremes. Widely spaced terminal
lugs are plated to facilitate lead attachment in production and are securely anchored to
prevent possible damage in use. All heat sink surfaces are plated to avoid corrosion,
which would otherwise introduce electrical or thermal discontinuities.
2N156
2N158
2N158A
1/4-Z» UNF-ii
.290 UIM.
FULL THREAD
DESIGN LIMITS
Collector to base voltage, VCB
Collector to emitter voltage, VCE
Emitter to base voltage, VEg
Collector Current, lc
Operating and Junction Temp, Tj
Thermal Resistance, junction
to mounting base
2N1S6 2N15B 2N158A
-30 -60 -80 Vdc
-30 -60 -60 Vdc
-15 -30 -30 Vdc
3
3
3A
-65to+100°C
3
3 3°C/W
SOLDER
LLJS
CHARACTERISTICS AT 2S° C
Collector Cut-off Current, IC|0
2N156
VCB=-30Vdc
2N158
VCB =-60 Vdc
2N158A
VCB=-80Vdc
1.0 mAdc Max.
1.0 mAdc Max.
1.0 mAdc Max.
Collector Cut-off Characteristics, IC|0
2N156
2N158
2N158A
VCB - -30 Vdc; TA - 85°C
VCB = -60 Vdc; TA - 85°C
VCB = -80Vdc;TA - 85°C
10 mAdc Max.
10 mAdc Max.
10 mAdc Max.
Collector Cut-off Current, !CEs
2N156
2N158
VCB=-30Vdc
VCB - -60 Vdc
2N158A
VCB = -60 Vdc
1.5 mAdc Max.
1.5 mAdc Max.
1.5 mAdc Max.
Collector to Emitter Breakdown Voltage, BVCEO
2N156
2N158
2N158A
lc = 250 mAdc
60 Vdc Min.
mitter Cut-off Current, IEBO
2N156
2N158
2N158A
VEB=-15Vdc
VE8=-30Vdc
VEB=-30Vdc
0.5 mAdc Max.
0.5 mAdc Max.
0.5 mAdc Max.
rrent Gain, Common Emitter, HK
2N156 .'
2N158A
-2^o.0^{n i}V^/d^jc
25 min.
21 min.
21 min.
Base to Emitter Voltaw. VH
2N156 )
0.70 Vdc Max.
2N158 lc - 500 mAdc; VCE -2.0 Vdc 0.85 Vdc Max.
2N158A )
0.85 Vdc Max.
aturation Voltagu, VCE (Sat)
2N156 )
2N158 } lc - 1 Adc; IB - 150 mA 0.75 VdcMax.
2N158A j
Thermal Resistance, ©
2NJ56
2N158
2N158A
3°C/WMax.
ut-off Frequency, fhf.
2N156
2N158
2N158A
C-0.5A;VCE- -2V
4KcMin.
4KcMin.
4 Kc Min.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftimishcd by NJ Semiconductors is believed to beboth accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discov*?d in its use NI
Semi-C onductors encourages customers to verify that datasheets are current before pfncing orders