1N5728 Datasheet, PDF (1/1 Pages) Microsemi Corporation – SILICON 400 mW ZENER DIODES

nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FEATURES
1N5728
thru
1N5757
• ZENER VOLTAGE 4.7 TO 75V
• SMALL RUGGED DOUBLE SLUG CONSTRUCTION 00-35
• CONSTRUCTED WITH AN OXIDE PASSIVATED ALL DIFFUSED DIE
TELEPHONE: [phone]
[phone]
FAX: [phone]
SILICON
400 mW
ZENER DIODES
MAXIMUM RATINGS
Operating Temperature: -65°C to +200°C
DC Power Dissipation: 400 mW
Power Derating: 2.63 mW/°C above 50eC
Forward Voltage @ 10 mA: 0.9 Volts
<L?,8.? MAX.
2.03 DIA.
"ELECTRICAL CHARACTERISTICS @ 25°C
TYPE
NUMBER
(Note 1)
1N5728B
1NS729B
1NS730B
1NS731B
REGULATOR
VOLTAGE
(Vi)
VOLTS
4.7
5.1
5.6
6.2
TEST
DYNAMIC REVERSE
CURRENT IMPEDANCE CURRENT
(It)
MODE
10
10
10
10
(Zz)
II.)
OHMS
1,1
70
3.0
50
3.0
25
3.0
10
3.0
I. TEST
VOLTAGE
(V.)
VOLTS
2
2
2
4
MAXIMUM
REGULATOR
CURRENT
(I,J
mA
70
65
60
55
TEMPERATURE
COEFFICIENT
ia«i
mV/'C
-1.0
-0.2
+ 1.2
+2.3
1N5732B
6.8
10
10
3.0
4
50
+3.0
1N5733B
1N5734B
1N5735B
1N5736B
1N5737B
7.5
10
8.2
10
9.1
10
10
10
11
5
10
2.0
15
1.0
15
0.5
20
0.2
20
0.1
5
45
+4.0
5
40
+5.0
6
40
+6.0
7
35
+7.0
8
30
+8.0
1IM5738B
12
5
25
0.1
8
30
+9.0
1N5739B
13
5
30
0.1
9
25
+ 10.5
IN 5740 B
15
5
30
0.1
10
25
+ 12.9
1N5741B
16
5
40
0.1
11
20
+ 13
1N5742B
18
5
45
0.1
12
20
+ 15
1N57436
1N5744B
1N5745B
1N5746B
1N5747B
20
5
55
0.1
14
15
+ 17
22
5
55
0.1
15
15
+ 19
24
5
70
0.1
17
15
+21
27
2
80
0.1
19
10
+23.5
30
2
80
0.1
21
10
+26
1N5748B
33
2
90
0.1
23
10
+29
1N5749B
36
2
90
0.1
25
10
+31
1N5750B
39
2
130
0.1
27
9
+ 34
1N5751B
43
2
150
0.1
30
9
+37
1NS752B
47
2
170
0.1
33
8
+ 40
1N5753B
51
2
180
0.1
36 ,
7
+44
1N5754B
56
2
200
0.1
39
6
+ 47
1N5755B
62
2
215
0.1
43
6
+ 51
1 N57568
68
2
240
0.1
48
5
+ 56
1N5757B
75
2
255
0.1
53
5
+ 60
1.000
25.400 ^MIN.
POLARITY
BAND
(CATHODE)
,175 _MAX.
0.018/0J22
0.457/0.559
DIA.
--
25.400
FIGURE 1
All dimensions i^.n ^INCH
m.m.
MECHANICAL
CHARACTERISTICS
CASE: Hermetically sealed glass
case. DO-35.
FINISH: All external surfaces are
corrosion resistant and leads sol-
derable,
THERMAL RESISTANCE: 200°C/
W (Typical) junction to lead at
0.375-inches from body.
POLARITY: Diode to be operated
with the banded end positive
with respect to (he opposite end.
WEIGHT: 0.2 grams.
MOUNTING POSITION:Any.
*.(EDEC Registered Data. The Type Number indicates 5% Tolerance. See Note I.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Intormation furnished by NJ Semi-Conductors is helieved to he both accurate and reliable at the time of going to press. However NJ
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers to verify tlwt datasheets are current before placingorders.