1N48 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – GOLD BONDED GERMANIUM DIODE

'Isiieu ^smi-donductoi ^Pioaaati, One.
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c/
20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
1N48
GOLD BONDED GERMANIUM DIODE
FEATURES
Low forward voltage drop—low power consumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgically bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C, unless otherwise specified)
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak Inverse Voltage
PIV
Reverse Current
Ir
Forward Voltage
Vf
85 Volts
500 mA
- 65 °C to 85 °C
80 mW
Conditions Win Max Unit
1 mA 85
V
50 V
833 MA
4 mA
1
V
T°C
25 °C
25 °C
25 °C
MECHANICAL
.021" _DIA
, 1" .
MIN
BKC
.300'
MAX
3' 1
^
i
r
.107'
.095"
DIA
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verity that datasheetsare current before placing orders