1N46 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – GOLD BONDED GERMANIUM DIODE

JZzmi-Conduatoi tPioducii, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1N46
GOLD BONDED GERMANIUM DIODE
TELEPHONE: [phone]
[phone]
FAX: [phone]
FEATURES
Low forward voltage drop—low power consumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgically bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C. unless otherwise specified)
•
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak Inverse Voltage
PIV
Reverse Current
Ir
Forward Voltage
Vf
50 Volts
500 mA
- 65 °C to 85 °C
80 mW
Conditions
1 mA
50 V
3 mA
Win Max Unit
50
V
1500 uA
1
V
T°C
25 °C
25 °C
25 °C
MECHANICAL
.021- _DIA
HJEZ:
, 1' , ^.300'
WIN
MAX
.107'
.095"
DIA
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
M Semi-Conductors encourages customers to verify that datasheets are current before placing orders.