1N4549B Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – SILICON 50 WATT ZENER DIODES

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lrna.
TELEPHONE: [phone]
[phone]
FAX: [phone]
1N3305thru
1N3350B
and
1N4549Bthru
1N4556B
FEATURES
• ZENER VOLTAGE 3.9 TO 200V
• LOW ZENER IMPEDANCE
• HIGHLY RELIABLE AND RUGGED
• FOR MIIITARY AND OTHER DEMANDING APPLICATIONS (See Below)
MAXIMUM RATINGS
Junction and Storage Temperatures: — 65°C to +175°C
DC Power Dissipation: 50 Watts
Power Derating: 0.5 W/° above 75"C
Forward Voltage @ 10 A: 1.5 Volts
'ELECTRICAL CHARACTERISTICS @ 30 °C Case Tempera tu
JEOEC
TYPt NO.
(Hotel)
NOMINAL
.11HU
VOITAGE
V. ffi 1,.
Vdlll
INolt 2)
ZEKEI
IISI
cmufHi
(I..) *A
MAX. DYNAMIC
IMI>EDANCEtINol[ 1
!„ » 1. Zjk<a
Izk - 5mA
OHMS OHMS
MU. DC
ZENfR
CU«»(N1
II.. I
mA
MAX. HEvfise
LEA HACE"
CU ME»I
inif> ilel/I
i'A voiTs
TYPICUl
TEMP.
COEff.
a.,
%rc
'1N4S498
l 1N4550B
MN45S1B
MN4552B
tlN45S36
'1N4554B
1*145559
!N4b56B
3.9 3.200
4.3 2.900
4.7 2.660
6.1 2.4SO
6.6 2.2bO
6.2 2.000
6.8 1.850
7.3 1.C30
0.18
0,18
0.12
0.12
0.12
0.14
0.1«
0.24
400
500
600
660
900
1.000
200
too
11.900 160
10,650 150
9,700 100
8,900 20
8,100 20
7,300 20
6,650 ¹⁰
0.05O 10
o.s -0.044
0.6 -0.033
1.0 -0.016
1,0 * 0.010
1.0 +0.03O
2.0 •0.049
2.0 •0.053
3.0 *a057
* 1N3305B
'1N3306B
1N33I)->B
:1M3308B
»1M33I»B
»1N33IOB
8.8
7.5
8.2
9.1
10.0
11.0
1.850
1.700
1.500
1.370
1,200
1,100
0.20
70
6.800 300 4.5 0.040
0.30
70
5.900 125 6.0 0.046
0.40
70
5.2OO 50 5.4 0.048
0.60
70
4.800 25 6.1 0.050
0.60
80
4,300 25 6.7 0.065
0.80
80
3.900 1O 8.4 0.060
1M3311B
1N3312B
1N3313B
HN3314B
T1N3315B
1N3316B
12.0
13.0
14.0
1S.O
16.O
17.0
1.000
960
890
830
78O
740
1.00
1.10
1.20
1.40
1.60
130
80 3,800 10 9.1 0.066
80 3.300 10 9.9 0.065
80
3.000 10 11,4 0.070
80 2.800 10 11.4 0.070
80 2.650 10 12.2 0.070
80
2.500 10 13.0 0.076
i 1N3317B
1N3318B
• 1N3319B
1N3320B
IN33I1B
1N3322B
i 1N3323B
-1N3324B
• 1N3325B
: 1N3326B
. 1N3327B
t!N3328fl
18.0
19.0
20.0
22.0
24.0
26.0
^700
MO
630
570
520
500
27.0
480
30.0
420
33.0
3flO
36.0
3SO
39.0
320
43.0
290
2.00
80
2.20
80
2.40
80
2.50
BO
2.60
80
3.70
90
230
SO
3,00
90
3.20
90
3.50
80
4.00
90
4iO 90
2.300
2.2OO
2.1OO
1.900
1.750
1.550
1,500
1,400
1.300
1,150
1.050
975
10 13,7 0.076
10 13.7 0.075
10 15.2 0.075
10 16.7 0.080
10 18.2 O.OBO
10 18.2 0.080
10 20.8 0.066
10 72.8 0.085
10 26.1 O.OB5
10 27.4 0.085
10 29.7 0,090
10 32.7 0.090
1N3329B
'1N3330B
1N333IS
MN3337B
1 N33338
'• \B
4S.O
47.0
5O.O
51.0
52.0
56.0
> 1N3335B
'1N333GB
•1N3337B
MN3338B
1N3339B
: 1N3340R
82.0
68.0
75.0
82.0
91.0
10O.O
IN 134 IB
1N3342B
1N33430
'1N3344B
1M3345B
1 1N334GB
106.0
110.0
120,0
130.0
140.0
150.0
280
4.50 100
270
5.00 100
250
5.00
100
24S
5.20 100
240
5.50 1OO
220
6.00 110
200
7.00 120
1(0
8.00 14O
170
9.00 150
ISO 11.00 1EO
140 15.00 180
120 20.00 200
1_n2_o0
25.00
30.00
2)0
220
100 40.00 240
95 50.00 275
90 GO. 00 325
B5 75.00 400
930 10 32.7 0.090
880
830
10
10
x^XXt
0.090
0.090
810 10 xs 0.090
79O 10 42.6 0.090
740 10 42.6 0.090
860 10 47.1 0.090
800 10 51.7 0.090
540 10 M.O 0.090
490 10 63.2 0.090
420 10 69.2 O.O90
4OO 10 76.0 0.090
380 10 83.0 0.095
365 10 83.0 0.096
336 10 91.2 O.O95
310 10 99.1 0.096
290 10 14.0 O.O95
270 10 14.0 | 0.095
» 1N3347B
1N3348B
•• 1M3349e
: 1N3350B
IM.O
173.0
1M.O
20O.O
BO 80.00
70 85.00
n 90.00
65 100.00
460
SOO
625
600
250 10 21.6 0.095
230 10 21.8 0,096
220 10 38J 0,096
200 10 51.0 0.100
SILICON
50 WATT
ZENER DIODES
11.506
0.4SO M 80tl
11.430 I
I MAX \3
WT •
:ftj— '/«•'« UNF-Z«
=Q TO WITHSTAND A
*-^ TORQUE UP TO
30 IN-LB. WHEN NUT
IS TIGHTENED OK STUD
FIGURE I
INCH
All dimensions in
MECHANICAL
CHARACTERISTICS
CASE: Industry Standard DO-5,
11/16" Hex.stud with 1/4-28
threads, welded, hermetically
sealed metal and glass.
DIM ENSIGNS: See outline draw-
ing Fig. 1,
FINISH: All external surfaces are
corrosion resistant and terminal
solderable.
THERMAL RESISTANCE: l.S°C/W
(Typical) junction to stud.
POLARITY: Standard polarity
anode to case. Reverse polarity
(cathode to case) indicated by
suffix R .
NI Seini-l I'uduclon reserve* th« right to thong* t«l condilions. parameter limits ;ind pickup dimension* without notice
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