1N45 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – GOLD BONDED GERMANIUM DIODE

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
^Pioducti,
TELEPHONE: [phone]
1N45
[phone]
GOLD BONDED GERMANIUM DIODE
FA* [phone]
FEATURES
Low forward voltage drop—low powerconsumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgical^ bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C, unless otherwise specified)
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak Inverse Voltage
PIV
Reverse Current
Ir
Forward Voltage
Vf
75 Volts
500 mA
- 65 °C to 85 °C
80 mW
Conditions Win Max Unit
1 mA 75
V
50 V
410 HA
3 mA
1
V
T°C
25 °C
25 °C
25 °C
MECHANICAL
.021' _DIA
— ir—
. 1" . ^.300'
MIN
MAX
=?cZ]
.095'
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
nodce. Information fum.shed b> NJ Semiconductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
V Semi-Conductors entourages customers to verify that datasheets are current before placing orders