1N38 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – GOLD BONDED GERMANIUM DIODE

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1N38
GOLD BONDED GERMANIUM DIODE
TELEPHONE: [phone]
[phone]
FAX: [phone]
FEATURES
Low forward voltage drop—low power consumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgical^ bonded
ABSOLUTE MAXIMUM RATINGS (at 25eC, unless otherwise specified)
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak Inverse Voltage
PIV
Reverse Current
Ir
Forward Voltage
Vf
100 Volts
500 mA
- 65 °C to 85 °C
80 mW
Conditions
Min Max Unit
1 mA 100
V
10 V
25 uA
7.5 mA
1
V
T°C
25 °C
25 °C
25 °C
MECHANICAL
.021'
DIA
19
r ^{—if—}
. r.
MIN
=JC=1
.300' ,
MAX
.107"
.095'
DIA
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to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
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