1N3712-21 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – Germanium Diodes

<£^mi.-Conductor ^Products., (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Germanium
I 1N3712-21 I
Diodes
TELEPHONE: [phone]
[phone]
FAX: [phone]
AXIAL DIODE OUTLINE
1N3712 1N3714 IN371B 1N371B 1N3720
1N3713 1N3710 1N3717 1N37I9 1N3721
J_
MAX. _{:sJL_}
,
f 4-
,ot
M4
Forward Current*
Reverse Current*
5
10
10
20
Storage Temperature
L»d Temperature X," :£
,
from case for 10 seconds
25
50
50
50
.,,.«
100 run
100 ma
, , .r
[
.020
•••.002
— M0|N° —
.IOOMAX.
•
.020
+ .002
OQ
-.001
ALL DIMENSIONS IN INCHES.
DIMENSIONS ARE REFERENCE UMI r«e. TQi.rnvifirO
•Derate maximum currunt.s I'/, per "C ambient temperature above 25'C-
electrical characteristics:
STATIC CHARACTERISTICS
Peak Point Current
Valley Point Current
Peak Point Voltage
Valley Point Voltage
Reverie Voltage (In £= Ir typ.)
Forward Voltage (Ir — Ir typ.)
(I,- = .25 I,, typ.)
I,-
Iv
v,.
Vv
V,,
V,,-
VKS*
1N3712. 1N3713
1N3714
1N371S
Min. Typ. Max. Min. Typ. MaxM. in. Typ. Max.Min. Typ. Max.
0.1) .'1.0 1.1 0.075 1.0001.025
2.0 2.2 2.4 2.15 2.20 2.25
0.12 0.18 .075 .005.140
0.20 0.48 .105 .210 .310
05
58
(i5
72
<!5
58
65
72
350
315 355 305
350
315 355 395
• 40
20
40
40
20
40
500
475 510 535
500
•175 510 535
410 450
410 450
DYNAMIC CHARACTERISTICS
Total Series Inductance
Ls
0.5
0.5
0.5
0.5
Total Series Resistance
Ks
1.5 -1.0
1.7 •1.0
1.0 3.0
1.1 3.0
Valley Point Terminal Capacitance'
C
5 10
3.5 5.0
10 25
7.0 10.0
Max. Negative Terminal Conductance -G
8
7.5 8,5 0.5
18
1G
19 22
Resistive Cutoff Frequency
f,,,
2.3
3.2
2.2
3.0
SolMfasonant Frequency
f,..
3.2
3.8
2.2
2.7
Freqi^ency of Oscillation
F
3,2
3.8
li.li
2.7
Rise Time
t."'
1.7
l.C
*V™ is defined as the valuo of forward voltage at a forward current of out quarter the typical peak current.
*"The frequency of oscillation (under short circuit conditions) for steady state larxo si;;nal sinusoidal oscillation is given by
equation. (3) which is the maximum frequency attainable without capacitancecompensation.
Quality Semi-Conductors