1N35 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – GOLD BONDED GERMANIUM DIODE

J.S.IIE.U
CX
- Conductor
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1N35
GOLD BONDED GERMANIUM DIODE
TELEPHONE: [phone]
[phone]
FAX: [phone]
FEATURES
Low forward voltage drop—low power consumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgically bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C, unless otherwise specified)
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak inverse Voltage
PIV
Reverse Current
Ir
Forward Voltage
Vf
50 Volts
500 mA
- 65 °C to 85 °C
80 mW
Condilions Min Max Unit
1 mA 50
V
50 V
200 HA
mA
V
T°C
25 °C
25 °C
25 °C
MECHANICAL
.021" _DIA
13
r
=1
. -300- .
MIN
MAX
.107_-' _DIA
.095
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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