MUSES01 Datasheet, PDF (4/12 Pages) New Japan Radio – High Quality Audio , J-FET Input, Dual Operational Amplifier

MUSES01
 Application Notes
•Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation P_D. The dependence of the MUSES01 P_D on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is P_D on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the P_D
lower than 25°C to it on 25°C. The P_D is shown following formula as a function of the ambient temperature between those
points.
Dissipation Power _{PD =}
Tjmax - Ta
θja
[W] (Ta=25°C to Ta=150°C)
Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, P_D is different in each package.
While, the actual measurement of dissipation power on MUSES01 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage V_DD) X (Supply Current I_DD) – (Output Power Po)
The MUSES01 should be operated in lower than P_D of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
P_D [mW]
DIP8
910
Ta [deg]
-40
25
85
150
(Topr max.) (Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES01
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Ver.2009-12-18