NJL5901AR-1-TE1 Datasheet, PDF (1/8 Pages) New Japan Radio – COBP PHOTO REFLECTOR

NJL5901AR-1
COBP PHOTO REFLECTOR
„ GENERAL DESCRIPTION
NJL5901AR-1 is the compact surface mount type photo reflector, which miniaturized outside dimension compared with the
current COBP reflector, NJL5901AR. Compared with the NJL5901AR, the mounting area of NJL5901AR-1 is reduced to
54%. Moreover, the output current is 400μA typ. and is raised 180% compared with the NJL5901AR.
„ FEATURES
• Miniature, thin package : 1.3mm × 1.6mm × 0.6mm
• High output : 400μA typ.
• Pb free solder re-flowing permitted : 260°C, 2times
• Built-in visible light cut-off filter
„ OUTLINE (typ.)
(0.42)
1.6^±0.1
(0.92)
C
K
(0.29)
Unit : mm
0.45^±0.1
0.45^±0.1
„ APPLICATIONS
• Detecting the location of Lens unit for Cellular Phone’s
camera module
• Detecting the location of CD/DVD optical pickup head
• Detecting the rotation of various motors
• Paper edge detection and mechanism timing detection of
facsimile, copy machine etc
E
A
PT CENTER LED CENTER
A : anode
K : cathode
C : collector
E : emitter
(0.07)
0.2^±0.1
(0.07)
0.65 0.35 0.65
PCB Pattern
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Emitter
Forward Current (Continuous) IF
Reverse Voltage (Continuous) VR
Power Dissipation
PD
Detector
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
VCEO
VECO
IC
PC
Coupled
Total Power Dissipation
Ptot
Operating Temperature
Topr
Storage Temperature
Tstg
Reflow Soldering Temperature Tsol
RATINGS
30
6
45
16
6
10
25
60
-30 to +85
-40 to +85
260
UNIT
mA
V
mW
V
V
mA
mW
mW
°C
°C
°C
„ ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITION
MIN TYP MAX UNIT
Emitter
Forward Voltage
Reverse Current
Capacitance
VF
IF=4mA
IR
VR=6V
Ct
VR=0V,f=1MHz
0.9
—
1.3
V
—
—
10
μA
—
25
—
pF
Detector
Dark Current
Collector-Emitter Voltage
ICEO VCE=10V
VCEO IC=100μA
—
—
0.2
μA
16
—
—
V
Coupled
Output Current
IO
IF=4mA,VCE=2V,d=0.7mm
280
—
700
μA
Operating Dark Current *1 ICEOD IF=4mA,VCE=2V
—
—
5
μA
Rise Time
tr
IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm —
30
—
μs
Fall Time
tf
IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm —
30
—
μs
*1 Icoed may increase according to the periphery situation of the surface mounted product.
16-Feb-07
-1–