SFPF1506 Datasheet, PDF (1/6 Pages) –

Niu Hang
Electronic Co. Ltd
SFPF1506/F
PFC BOOST SPECIAL SUPER FAST RECTIFIERS
Production
Data Sheet
VOLTAGE 600 Volts
CURRENT ^{15.0 Ampers}
FEATURES
■ Ultrafast recovery
■ Low reverse recovery current
■ Reduces losses in diode and switching
transistor
■ Low thermal resistance
■ Higher frequency operation
■ Insulated voltage: 1500 V_RMS
MECHANICAL DATA
NIUHANG's SFPF1506/F is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the SFPF1506/F,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
TO-220AC/ITO-220AC
TO-220AB
SFPF1506
NH
SFPF1506
ITO-220AB
SFPF1506F
NH
SFPF1506F
Unit:(mm)
1
2
Pin2
Pin1
CASE
1
2
Pin2
Pin1
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C(UNLESS OTHERWISE NOTED)
Table 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Symbol
Parameter
Value
Unit
V_RRM
I_F(AV)
I_FSM
T_stg
T_j
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
600
V
15
A
t_p = 10 ms sinusoidal
100
A
- 65 + 175
°C
175
°C
Table 3. Thermal resistances
Symbol
Parameter
Rth (j-c) Junction to case
Value
4.6
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
T_j = 25 °C
I_R
Reverse leakage current V_R = 600 V
T_j = 125 °C
V_F
Forward voltage drop
I_F = 15 A ^{Tj = 25 °C}
T_j = 150 °C
30
µA
35
400
3.4
V
1.5
1.9
http://www.dgniuhang.com
Date:2014/10/20 Rev.:AA
Page: 1 of 6