PRFMB75E6 Datasheet, PDF (4/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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Fig.13- Forward Characteristics of Free Wheeling Diode
150
(Typical)
TC=25°C
TC=125°C
125
100
75
50
25
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
500
trr
IF=75A
TC=25°C
TC=125°C
200
100
50
20
IRrM
10
5
2
0
75
150
225
300
375
450
-di/dt (A/µs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=12(, VGE=±15V, TC<125°C
200
400
600
800
Collector to Emitter Voltage V CE (V)
1x10¹
3
1
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
00
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