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PHMB800BS12 Datasheet, PDF (4/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual
PHMB800BS12
(5/5)
Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
1600
1400
1200
TC=25°C
TC=125°C
1000
800
600
400
200
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
IF=800A
TC=25°C
TC=125°C
trr
300
IRrM
100
30
0
800
1600 2400 3200 4000 4800 5600
-di/dt (A/µs)
5000
3000
1000
300
100
30
10
3
1
0.3
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=2.0(, VGE=±15V, TC=125°C
200
400
600
800
1000 1200
Collector to Emitter Voltage V CE (V)
1400
3x10-1
1x10-1
3x10-2
1x10-2
3x10-3
1x10-3
3x10-4
1x10-4
10-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10-4
10-3
10-2
10-1
1
101
Time t (s)
00
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