PRHMB50E6 Datasheet, PDF (3/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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Fig.7- Collector Current vs. Switching Time (Typical)
1
0.8
tOFF
VCC=300V
RG=20(
VGE=±15V
TC=25°C
Resistive Load
0.6
tf
0.4
0.2 ^tON
tr(V_CE)
0
0
20
40
60
80
Collector Current IC (A)
Fig.9- Collector Current vs. Switching Time
10
1
tOFF
VCC=300V
RG=20(
VGE=±15V
TC=125°C
Inductive Load
tON
0.1
tf
tr(Ic)
0.01
0.001
0
20
40
60
80
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
4
VCC=300V
RG=20(
VGE=±15V
TC=125°C
3 Inductive Load
EOFF
2
EON
ERR
1
0
0
10
20
30
40
50
60
70
80
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=300V
5 ^IC=50A
VGE=±15V
TC=25°C
2 ^{Resistive Load}
1
0.5
toff
0.2 _ton
0.1
tr(V_CE)
tf
0.05
0.02
10
30
100
300
Series Gate Impedance RG (()
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=300V
5 ^IC=50A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1
0.5 _toff
0.2 _ton
0.1 _tf
0.05 _tr(IC)
0.02
10
30
100
300
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
100
VCC=300V
IC=50A
VGE=±15V
30 TC=125°C
Inductive Load
10
EON
3
EOFF
1
ERR
0.3
10
30
100
300
Series Gate Impedance RG (()
00
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