PRHMB150B12A_1 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – 150A 1200V

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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=150A
5 _VGE=±15V
TC=25℃
2
1
toff
tr
ton
0.5
tf
0.2
0.1
0.05
1
2
5
10
20
50
100
200
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
300
TC=25℃
TC=125℃
250
200
150
100
50
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
IF=150A
TC=25℃
200
trr
100
50
20
IRrM
10
5
2
0
150
300
450
600
750
900
-di/dt (A/μs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area
RG=3.0Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
1
5x10 ^-1
2x10 ^-1
1x10 ^-1
5x10 ^-2
2x10 ^-2
1x10 ^-2
5x10 ^-3
2x10 ^-3
1x10 ^-3
10 ^-5
Fig.11- Transient Thermal Impedance
FRD
IGBT
TC=25℃
1 Shot Pulse
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
Time t (s)
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