PRHMB150A6_1 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – 150A 600V

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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
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5
VCC=300V
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I C= 1 5 0 A
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VG=±15V
2 ^TC=25℃
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toff
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1
ton
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
300
TC=25℃
TC=125℃
250
200
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0.5
tr
150
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0.2
tf
100
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0.1
50
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0.05
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1
10
100
Series Gate Impedance RG (Ω)
0
0
1
2
3
4
Forward Voltage VF (V)
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Fig.9- Reverse Recovery Characteristics (Typical)
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500
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I F= 1 5 0 A
TC=25℃
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200
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trr
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100
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50
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20
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IRrM
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10
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5
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0
200
400
600
800
1000
1200
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-di/dt (A/μs)
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area (Typical)
RG=5.1Ω
VGE=±15V
TC≦125℃
200
400
600
800
Collector to Emitter Voltage V CE (V)
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Fig.11- Transient Thermal Impedance
5x10 ^-1
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FRD
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2x10 ^-1
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1x10 ^-1
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IGBT
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5x10 ^-2
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2x10 ^-2
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1x10 ^-2
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5x10 ^-3
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2x10 ^-3
TC=25℃
1 Shot Pulse
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1x10
-3
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
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Time t (s)
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