PHMB600B12 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Single 600A 1200V

PHMB600B12
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=600A
5 _VGE=±15V
TC=25℃
toff
2
ton
1
tr
0.5
tf
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
10
20
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
1200
TC=25℃
TC=125℃
1000
800
600
400
200
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
I F= 6 0 0 A
TC=25℃
500
trr
300
200
100
IRrM
50
20
10
0
600
1200
1800
2400
3000
3600
-di/dt (A/μs)
5000
2000
1000
500
200
100
50
20
10
5
2
1
0.5
0.2 ₀
Fig.10- Reverse Bias Safe Operating Area (Typical)
RG=0.82Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
2x10^-1
1x10^-1
-2
5x10
fig11-Tansient Thermal Impedance
FRD
IGBT
-2
2x10
1x10^-2
5x10^-3
-3
2x10
-3
1x10
5x10^-4
Tc=25℃
1 Shot
2x10^-4 _-5
10
-4
10
10^-3
-2
10
10 ^-1
1
10 ¹
Time t （s）