PD7M440L_1 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – 50A 450~500V

Fig. 1 Typical Output Characteristics
80
TC=25ı 250 s Pulse Test
10V
6V
60
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
80
VDS=50V 250 s Pulse Test
60
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
8
TC=25ı 250 s Pulse Test
6
ID=50A
Tj=25ı
40
40
4
125ı
VGS=5V
20
20
25A
2
15A
0
4V
0
2
4
6
8
10
12
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 4 Typical Capacitance
Fig. 4 Vs. Drain-Source Voltage
18
VGS=0V f=1kHz
15
12
Ciss
0
0
2
4
6
8
GATE TO SOURCE VOLTAGE VGS (V)
Fig. 5 Typical Gate Charge
Fig. 5 Vs. Gate-Source Voltage
16
ID=35A
VDD= 100V
250V
400V
12
0
0
4
8
12
16
GATE TO SOURCE VOLTAGE VGS (V)
Fig. 6 Typical Switching Time
Fig. 6 Vs. Series Gate impedance
10
ID=25A VDD=250V TC=25ı 80 s Pulse Test
5
2
9
8
Coss
6
4
Crss
3
1
0.5
toff
ton
0.2
0
1
2
5
10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
1000
RG=7 VDD=250V TC=25ı 80 s Pulse Test
500
td(off)
200
td(on)
100
tr
50
tf
20
10
1
2
5
10
20
Fig. 10 Maximum Safe Operating Area
50 100
0
0
80 160 240 320 400 480
TOTAL GATE CHRAGE Qg (nC)
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
120
250 s Pulse Test
100
80
0.1
2
5
10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
Fig. 9 Typical Reverse Recovery Characteristics
2000
IS=50A IS=25A Tj=150ı
1000
trr
500
60
200
40
Tj=125ı
Tj=25ı
IR
100
20
50
0
0
0.2 0.4 0.6 0.8 1.0 1.2
0
SOURCE TO DRAIN VOLTAGE VSD (V)
Fig. 11 Normalized Transient Thermal impedance(MOSFET)
100 200 300 400 500 600
-dis/dt (A/ s)
200
TC=25ı Tj=150ıMAX Single Pulse
Operation in this area
is limited by RDS (on)
100
10 s
50
100 s
20
10
1ms
5
2
10ms
1
DC
0.5
0.2
12
5 10 20
-441L -440L
50 100 200 500 1000
DRAIN TO SOURCE VOLTAGE VDS (V)
2
10⁰
5
2
10^-1
5
Per Unit Base
Rth(j-c)=0.36ı/W
2
1 Shot Pulse
10^-2
10
-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
PULSE DURATION t (s)
- ₃₀₅ -