PD4M440L_1 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – 30A 450~500V

Fig. 1 Typical Output Characteristics
50
TC=25ı 250 s Pulse Test
10V
40
6V
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2 Vs. Gate-Source Voltage
8
TC=25ı 250 s Pulse Test
ID=30A
6
Fig. 3 Typical Drain-Source On Voltage
Fig. 3 Vs. Junction Temperature
VGS=10V 250 s Pulse Test
0.50
ID=30A
15A
0.42
10A
30
20
VGS=5V
10
0
4V
0
2
4
6
8
10
12
DRAIN TO SOURCE VOLTAGE VDS (V)
Fig. 4 Typical Capacitance
Fig. 4 Vs. Drain-Source Voltage
12
VGS=0V f=1kHz
10
8
Ciss
6
Coss
4
2
Crss
4
15A
2
10A
0
0
4
8
12
16
GATE TO SOURCE VOLTAGE VGS (V)
Fig. 5 Typical Gate Charge
Fig. 5 Vs. Gate-Source Voltage
16
ID=20A
VDD= 100V
250V
400V
12
8
4
0.34
0.26
0.18
0.10
-40
0
40
80
120
160
JUNCTION TEMPERATURE Tj ( )
Fig. 6 Typical Switching Time
Fig. 6 Vs. Series Gate impedance
5
ID=15A VDD=250V TC=25ı 80 s Pulse Test
2
1
0.5
toff
0.2
ton
0.1
0
1
2
5
10 20
50 100
DRAIN TO SOURCE VOLTAGE VDS (V)
0
0
40
80 120 160 200 240
TOTAL GATE CHRAGE Qg (nC)
0.05
2
5
10 20
50 100 200
SERIES GATE IMPEDANCE RG ( )
Fig. 7 Typical Switching Time
Fig. 7 Vs. Drain Current
1000
RG=7 VDD=250V TC=25ı 80 s Pulse Test
500
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8 Characteristics
60
250 s Pulse Test
50
Fig. 9 Typical Reverse Recovery Characteristics
2000
IS=30A IS=15A Tj=150ı
1000
200
td(off)
40
trr
500
100
td(on)
30
tr
200
50
tf
20
Tj=125ı
Tj=25ı
100
IR
20
10
1
2
5
10 20
50
DRAIN CURRENT ID (A)
Fig. 10 Maximum Safe Operating Area
200
TC=25ı Tj=150ıMAX Single Pulse
Operation in this area
100 ^{is limited by RDS (on)}
50
10 s
20
100 s
10
1ms
5
2
10ms
1
10
50
0
0
0.2 0.4 0.6 0.8 1.0 1.2
M
0
100 200 300 400 500 600
O
SOURCE TO DRAIN VOLTAGE VSD (V)
-dis/dt (A/ s)
S
Fig. 11 Normalized Transient Thermal impedance(MOSFET)
F
E
T
2
10⁰
5
2
10^-1
5
Per Unit Base
Rth(j-c)=0.56ı/W
2
1 Shot Pulse
10
-2
10
-5
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
PULSE DURATION t (s)
0.5
DC
0.2
12
5 10 20
-441L -440L
50 100 200 5001000
DRAIN TO SOURCE VOLTAGE VDS (V)
- ₃₀₂ -