PRHMB75A6_1 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – 75A 600V

ç
̧̢̥̝̗̖̓̑̒ç
ç
ç
ç
ç
Fig.1- Output Characteristics (Typical)
ç
150
VGE=20V 12V
TC=25℃
ç
15V
ç
125
10V
ç
ç
100
ç
ç
75
9V
ç
50
ç
ç
25
ç
8V
ç
7V
0
ç
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
ç
ç
Fig.3- Collector to Emitter On Voltage
ç
vs. Gate to Emitter Voltage (Typical)
ç
16
TC=125℃
ç
14
ç
IC=30A
75A
150A
ç
12
ç
10
ç
ç
8
ç
6
ç
4
ç
ç
2
ç
0
ç
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
ç
ç
ç
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
ç
ç
20000
Cies
ç
10000
Coes
ç
Cre s
5000
VGE=0V
f=1MHZ
TC=25℃
ç
ç
2000
ç
1000
ç
500
ç
ç
200
ç
100
ç
50
0.2
0.5 1 2
5 10 20
50 100 200
ç
Collector to Emitter Voltage VCE (V)
ç
ç
ç
ç
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25℃
IC=30A
150A
14
75A
12
10
8
6
4
2
00
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=4Ω
TC=25℃
350
14
300
12
250
10
200
8
VCE=300V
150
6
200V
100
4
100V
50
2
0
0
0
75
150
225
300
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 ^RG=10Ω
VGE = ± 1 5 V
0.8 ^TC=25℃
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2
tf
0.1
tr
0
0
20
40
60
80
Collector Current IC (A)