PRHMB400E6 Datasheet, PDF (2/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

ＰＲＨＭＢ４００Ｅ６
800
700
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
9V
1
2
3
4
Collector to Emitter Voltage VCE (V)
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=200A
800A
400A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=0.75(
TC=25°C
350
14
300
12
250
10
VCE=300V
200
8
150
200V
6
100V
100
4
50
2
0
0
0
200 400 600 800 1000 1200 1400 1600
Total Gate Charge Qg (nC)
800
700
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=200A
400A
800A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
300000
100000
VGE=0V
f=1MHZ
TC=25°C
30000
10000
3000
1000
Cies
Coes
Cres
300
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
00
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