PRHMB100E6 Datasheet, PDF (2/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

ＰＲＨＭＢ１００Ｅ６
200
180
160
140
120
100
80
60
40
20
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
1
2
3
4
Collector to Emitter Voltage VCE (V)
9V
8V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25°C
IC=50A
200A
14
100A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=3.0(
TC=25°C
350
14
300
12
250
10
VCE=300V
200
8
150
200V
6
100V
100
4
50
2
0
0
0
100
200
300
400
Total Gate Charge Qg (nC)
200
180
160
140
120
100
80
60
40
20
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=50A
100A
200A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
30000
10000
VGE=0V
f=1MHZ
TC=25°C
Cies
3000
Coes
1000
Cres
300
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
00
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