PGH20016AM Datasheet, PDF (2/4 Pages) Nihon Inter Electronics Corporation – THYRISTOR MODULE 200A / 1600V

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Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
Part of Thyristor (1 die)
Symbol
Test Conditions
Maximum Value.
IRM VRM= VRRM, Tj= 125°C
VFM IFM= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
20
1.35
0.10
*1 Value Per 1 Arm
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Grade
PGH20016AM
1600
1700
1600
1700
Unit
mA
V
°C/W
Unit
V
V
Parameter
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
ITSM
I²t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Conditions
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2^•IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Max Rated
Value
3200
51200
100
5
1
2
10
5
Unit
A
A²s
A/µs
W
W
A
V
V
Electrical • Thermal Characteristics
Characteristics
Symbol
Test Conditions
Peak Off-State Current
Peak Reverse Current
Peak On-State Voltage
Gate Current to Trigger
Gate Voltage to Trigger
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
IDM VDM= VDRM, Tj= 125°C
IRM VRM= VRRM, Tj= 125°C
VTM ITM= 200A, Tj=25°C
Tj=-40°C
IGT VD=6V,IT=1A Tj=25°C
Tj=125°C
Tj=-40°C
VGT VD=6V,IT=1A Tj=25°C
Tj=125°C
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
tq dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
td
tr
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
IL Tj=25°C
IH Tj=25°C
Rth(j-c) Junction to Case
Maximum Value.
Min. Typ. Max.
Unit
50 mA
50 mA
1.35 V
300
150 mA
80
5.0
3.0 V
2.0
0.25
V
500
V/µs
150
µs
6
µs
2
µs
4
µs
150
mA
100
0.25 °C/W
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