PDMB200B12C Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 200A 1200V

PDMB200B12C
Fig.1- Output Characteristics (Typical)
400
VGE = 2 0 V
12V
TC=25℃
10V
15V
300
9V
200
100
00
16
14
12
10
8
6
4
2
00
8V
7V
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC= 1 0 0 A
400A
200A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
20000
VGE = 0 V
f=1MHZ
TC= 2 5 ℃
Cies
10000
5000
2000
Coes
1000
500
Cres
200
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC=100A
400A
14
200A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=3Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
300
600
900
1200
1500
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 _tOFF
VCC=600V
RG= 2.0 Ω
VGE=±15V
TC=25℃
0.8
0.6
tf
0.4
0.2 _tON
0 ^tr
0
50
100
150
200
Collector Current IC (A)