PAT1008 Datasheet, PDF (2/4 Pages) Nihon Inter Electronics Corporation – THYRISTOR MODULE

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Electrical • Thermal Characteristics
Characteristics
Peak Off-State Current
Peak On-State Voltage
Gate Current to Trigger
Gate Voltage to Trigger
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance *1
Value Per 1Arm
*1: Value Per Module
Symbol
Test Conditions
IDM VDM= VDRM, Tj=125°C
VTM ITM= 300A, Tj=25°C
Tj=-40°C
IGT VD=6V,IT=1A Tj=25°C
Tj=125°C
Tj=-40°C
VGT VD=6V,IT=1A Tj=25°C
Tj=125°C
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
tq dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt Tj=25°C, I_TM=I_T(RMS)
td VD=100V, IG=200mA
tr ^diG^{/dt=0.2A/µs}
IL Tj=25°C
IH Tj=25°C
Rth(j-c) Junction to Case
Rth(c-f)
Base Plate to
with Thermal
Heat Sink
Compound
Maximum Value.
Min. Typ. Max.
40
1.38
200
100
50
4
2.5
2
0.25
500
100
6
2
4
100
50
0.15
0.1
Unit
mA
V
mA
V
V
V/µs
µs
µs
µs
µs
mA
°C/W
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