|
TCU10A30 Datasheet, PDF (1/4 Pages) Nihon Inter Electronics Corporation – Diffusion type Silicon diode | |||
|
10A 300V 30ns
FRD Type TCU10A30ç ç ç ç ç
ßà¬Ã§ É¿Ö¦à¢ÜγϦίϯμΠΦÊÏ
ïÄÄÄðç
çDiffusion type Silicon diode
ç ç ç ç Axial Lead Type
༻à±Ã§ É¿à¾à½°Õ¾àª³à¼»Î¯Ï¯ÏÊλɺνϣοÏͷߴप೾à©à½¶à¼»
For Power Factor Improvement,
High frequency rectification
ËOUTLINE DRAWING
Ë à ·àà°Ö¨Ã§ MAXIMUM RATINGS(Taʹ25ËÉ¿unless otherwise specified)ç ç ç ç ç Approx Net Weight:1.4g
Item
ÍÎà¸¦Í ÏÊΫిٯѹ
Repetitive peak reverse voltage
à¸Ûà©à½¶à°¿à½¶
Average rectified forward current
࣮ޮॱిྲྀ
R.M.S. forward current
αÊδॱిྲྀ
Surge forward current
à²à¡àªß¹Ô¹à±àµ£Ò
Operating junction temperature range
à¸à¬Ô¹à±àµ£Ò
Storage temperature range
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Condition
50Hz æ£å¼¦å
¨æ³¢,æµæè² è· Tc = 109â
50Hz full sine wave , Resistance load
50Hz æ£å¼¦å
¨æ³¢ 1 ãµã¤ã¯ã« éããè¿ã
50Hz full sine wave 1cycle, non-repetitive
Tstg
Max. Rated value
Unit
300
V
10
A
11.1
A
100
A
ʵ40ÊÊ´150
Ë
ʵ40ÊÊ´150
Ë
ؾి Ëతɾ೤తà²à©Ã§ ELECTRICAL / THERMAL CHARACTERISTICS
Item
ÏÊΫྲྀిٯ
Peak reverse current
ÏÊΫॱిѹ
Peak forward voltage
ٯճ෮à£Ø
Reverse recovery time
೤à°ß
Thermal resistance
Symbol
IRM
VFM
Írr
VRM=VRRM
IFM=5A
IFM=5A
Condition
Tj=25Ë
1 à«à¢ ÍͨÎ
per diode
Tj=25Ë
1 à«à¢ ÍͨÎ
per diode
Tj=25Ë Êµdi/dt=50A/Ðs
Rth(j-c) àªß¹à·¦É¾ÎÊ뵯 Junction to case
Min. Typ. Max.
ʵ ʵ 25
ʵ 1.12 1.30
ʵ 19 30
ʵʵ 3
Unit
ÐA
V
ns
Ë/W
|
▷ |