TCH10A15 Datasheet, PDF (1/6 Pages) Nihon Inter Electronics Corporation – Shottky Barrier Diode

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S B D T y p e : TCH10A15
FEATURES
*SQUARE-PAK TO-263AB(SMD)
Packaged in 24mm Tape and Reel
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
OUTLINE DRAWING
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Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
Approx Net Weight: 1.4g
TCH10A15
Unit
150
V
10
Tc=121°C
50 Hz Full Sine Wave
Resistive Load
A
11.1
A
130
50Hz Full Sine Wave ,1cycle
Non-repetitive
A
-40 to +150
°C
-40 to +150
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance (Junction to Case)
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 5 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
-
-
1 mA
-
- 0.88 V
-
-
3 °C /W
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