|
PTMB100E6C Datasheet, PDF (1/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Six Pack | |||
|
IGBT ï¼ï½ï½ï½ï½ï½
ï¼ ï¼³ï½ï½ ï¼°ï½ï½ï½
ï¼ï¼ï¼ï¼¡ï¼ï¼ï¼ï¼ï¼¶
QS043-402-ï¼2/5ï¼
ï¼°ï¼´ï¼ï¼¢ï¼ï¼ï¼ï¼¥ï¼
ï¼°ï¼´ï¼ï¼¢ï¼ï¼ï¼ï¼¥ï¼ï¼£
â¡ å è·¯ å³ ï¼ ï¼£ï¼©ï¼²ï¼£ï¼µï¼©ï¼´
â¡ å¤ å½¢ 寸 æ³ å³ ï¼ ï¼¯ï¼µï¼´ï¼¬ï¼©ï¼®ï¼¥ DRAWING
1
8
9
5
10
3
11
Pï¼´MB100E6
21
1
2
19
12
13
6
14
15
5
6
17
16
17
7
18
19
9
10
15
2
4-Ã5.5
7-M4
4
13
94
80
1
2
8 9 10 11 12 13 14 15 16 17 18 19
3
56
7
4
8
18.5 18.5 18.5 18.5
12-fasten tab
#110
4.5 10 4.5 10 4.5 10 4.5 10 4.510 4.5
Dimension:ï¼»mmï¼½
4Ã Ã 5.50
99. 00
94.50
4Ã 19.05= 76.20
CL
3.81 19.05
12.62
19
18
17
16
20
15
14
21
13
1 2 3 4 5 6 7 8 9 10 11 12
3.81
15.24
8.01
110.00
121. 50
4Ã Ã2.10
3
7
11
20
4
8
12
14
Pï¼´MB100E6C
LABEL
118. 11
LABEL
119. 60
â¡ æ 大 å® æ ¼ ï¼ ï¼ï¼¡ï¼¸ï¼©ï¼ï¼µï¼ RATINGS ï¼ï¼´ï¼£ï¼ï¼ï¼âï¼
Pï¼´MB100E6
Pï¼´MB100E6C
Iï½ï½
ï½
ã³ã¬ã¯ã¿ã»ã¨ããã¿éé»å§
Collector-Emitter Voltage
ã² ã¼ ãã»ã¨ ã ã ã¿ é é» å§
Gate-Emitter Voltage
ã³ã¬ã¯ã¿é»æµ
ï¼£ollector ï¼£urrent
ã³ã¬ã¯ã¿æ失
Collector Power Dissipation
DC
ï¼ï½ï½
ï¼³ï½ï½ï½ï½ï½
VCES
VGES
IC
ICP
ï¼°ï¼£
ï¼²ï½ï½ï½
ï½ ï¼¶ï½ï½ï½ï½
ï¼ï¼ï¼
±ï¼ï¼
ï¼ï¼ï¼
ï¼ï¼ï¼
ï¼ï¼ï¼
ï¼µï½ï½ï½
V
V
A
ï¼·
æ¥å温度
Junction Temperature Range
ä¿å温度
ï¼³torage ï¼´emperature ï¼²ange
ï¼´ï½
ï¼´ï½ï½ï½
ï¼ï¼ï¼ï½ï¼ï¼ï¼ï¼
â
ï¼ï¼ï¼ï½ï¼ï¼ï¼ï¼
â
絶 ç¸ è å§(ï¼´erminal to ï¼¢ase AC,ï¼ï½inute)
Isolation Voltage
ç· ã ä» ã ã 㫠㯠ï¼odule ï¼¢ase to Heatsink
ï¼ounting ï¼´orque
ï¼¢usbar to ï¼ain ï¼´erminal
VISO
Fï½ï½ï½
Pï¼´MB100E6
ï¼,ï¼ï¼ï¼
ï¼ï¼ï¼ï¼.ï¼ï¼
ï¼.ï¼ï¼ï¼ï¼.ï¼ï¼
PDMB100E6ï¼£
Vï¼ï¼²ï¼ï¼³ï¼
ï¼ï¼ï¼ï¼.ï¼ï¼ ï¼®ã»ï½
(kgfï½¥cm)
â¡ é» æ° ç ç¹ æ§ ï¼ ï¼¥ï¼¬ï¼¥ï¼£ï¼´ï¼²ï¼©ï¼£ï¼¡ï¼¬ CHARACTERISTICS ï¼ï¼´ï¼£ï¼ï¼ï¼âï¼
ï¼£ï½ï½ï½ï½ï½ï½ï½
ï½ï½ï½ï½ï½ï½
ã³ã¬ã¯ã¿é®æé»æµ
Collector-Emitter Cut-Off Current
ã²ã¼ãæ¼ãé»æµ
Gate-Emitter Leakage Current
ï¼³ï½ï½ï½ï½ï½ ï¼´ï½
ï½ï½ ï¼£ï½ï½ï½ï½ï½ï½ï½ï½
ICES
VCE= 600V, VGE= 0V
IGES
VGE= ±20V,VCE= 0V
ï¼ï½ï½.
ï¼
ï¼´ï½ï½.
ï¼
ï¼ï½ï½. ï¼µï½ï½ï½
ï¼.ï¼
ï½ï¼¡
ï¼
ï¼
ï¼.ï¼
μA
ã³ã¬ã¯ã¿ã»ã¨ããã¿é飽åé»å§
Collector-Emitter Saturation Voltage
VCEï¼ï½ï½ï½ï¼ IC= 100A,VGE= 15V
ï¼
ï¼.ï¼ ï¼.ï¼
V
ã² ã¼ ã ãããå¤é»å§
Gate-Emitter Threshold Voltage
VGEï¼ï½ï½ï¼
VCE= 5V,IC= 100mA
ï¼.ï¼
ï¼
ï¼.ï¼
V
å
¥å容é
Input Capacitance
ã¹ã¤ããã³ã°æé
ï¼³witching ï¼´ime
ä¸ææé
ã¿ã¼ã³ãªã³æé
ä¸éæé
ã¿ã¼ã³ãªãæé
ï¼²ise ï¼´ime
ï¼´urn-on ï¼´ime
Fall Time
ï¼´urn-off ï¼´ime
ï¼£ï½ï½
ï½
ï½ï½
ï½ï½ï½
ï½ï½
ï½ï½ï½ï½
VCE= 10V,VGE= 0V,ï½= 1MHZ
VCC= 300V
RL= 3.0Ω
RG= 8.2Ω
VGE= ±15V
ï¼
5,000
ï¼
ï½ï¼¦
ï¼
ï¼.ï¼ï¼ ï¼.ï¼ï¼
ï¼
ï¼.ï¼ï¼ ï¼.ï¼ï¼
μï½
ï¼
ï¼.ï¼ï¼ ï¼.ï¼ï¼
ï¼
ï¼.ï¼ï¼ ï¼.ï¼ï¼
â¡ããªã¼ãã¤ã¼ãªã³ã°ãã¤ãªã¼ãã® ç¹ æ§ï¼ FREE WHEELING DIODE RATINGS ï¼ ï¼£ï¼¨ï¼¡ï¼²ï¼¡ï¼£ï¼´ï¼¥ï¼²ï¼©ï¼³ï¼´ï¼©ï¼£ï¼³ï¼ï¼´ï¼£ï¼ï¼ï¼âï¼
é
é»
æµ
Forward Current
Iï½ï½
ï½
DC
ï¼ï½ï½
ï¼³ï½ï½ï½ï½ï½
IF
IFï¼
ï¼²ï½ï½ï½
ï½ ï¼¶ï½ï½ï½ï½
ï¼ï¼ï¼
ï¼ï¼ï¼
ï¼µï½ï½ï½
A
ï¼£ï½ï½ï½ï½ï½ï½ï½
ï½ï½ï½ï½ï½ï½
é
é»
å§
Peak Forward Voltage
éå復æé
ï¼²everse ï¼²ecovery ï¼´ime
ï¼³ï½ï½ï½ï½ï½ ï¼´ï½
ï½ï½ ï¼£ï½ï½ï½ï½ï½ï½ï½ï½
VF
ï½ï½ï½
IF= 100A,VGE= 0V
IF= 100A,VGE= -10V
ï½i/ï½t= 200A/μs
â¡ ç± ç ç¹ æ§ ï¼ ï¼´ï¼¨ï¼¥ï¼²ï¼ï¼¡ï¼¬ CHARACTERISTICS
ï¼£ï½ï½ï½ï½ï½ï½ï½
ï½ï½ï½ï½ï½ï½
ç±
æµ
æ
IGBT
Thermal Impedance
Diode
ï¼³ï½ï½ï½ï½ï½ ï¼´ï½
ï½ï½ ï¼£ï½ï½ï½ï½ï½ï½ï½ï½
ï¼²th(j-c) Junction to Case
ï¼Tc測å®ç¹ãããç´ä¸ï¼
æ¥æ¬ã¤ã³ã¿ã¼æ ªå¼ä¼ç¤¾
ï¼ï½ï½. ï¼´ï½ï½. ï¼ï½ï½. ï¼µï½ï½ï½
ï¼
ï¼.ï¼ ï¼.ï¼
V
ï¼
ï¼.ï¼ï¼ ï¼.ï¼ï¼ μï½
ï¼ï½ï½.
ï¼
ï¼
ï¼´ï½ï½.
ï¼
ï¼
ï¼ï½ï½.
ï¼.ï¼ï¼
ï¼.ï¼ï¼
ï¼µï½ï½ï½
âï¼ï¼·
00
|
▷ |