PT76S12 Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – DIODE MODULE 75A/1200V/1600V

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DIODE MODULE 75A/1200V/1600V _{PT76S12 PT76S16}
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Symbol
VRRM
VRSM
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Approx Net Weight:180g
Type / Grade
P76S12
PT76S16
1200
1600
1300
1750
Unit
V
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
IO(AV)
IFSM
I²t
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
Unit
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=75°C
75
A
50 Hz Half Sine Wave,1Pulse
Non-repetitive
540
A
2msec to 10msec
1500
A²s
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
Greased
M5 Screw
M5
2.4 to 2.8
2.4 to 2.8
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
IRM VRM= VRRM, Tj= 125°C
VFM IFM= 75A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Rth(c-f)
Base Plate to Heat
Compound (Total)
Sink
with
Thermal
Max. Unit
10 mA
1.4 V
0.24
0.06 ^°C/W
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