PHM5601 Datasheet, PDF (1/4 Pages) Nihon Inter Electronics Corporation – MOSFET MODULE Single 560A/150V

MOSFET MODULE Single 560A /150V
PHM5601
OUTLINE DRAWING
FEATURES
* Trench Gate MOS FET Module
* Super Low Rds(ON) 2 milliohms( @560A )
* With Fast Recovery Source-Drain Diode
TYPICAL APPLICATIONS
* Chopper Control For FORKLIFTs
Circuit
MAXMUM RATINGS
Approximate Weight : 650g
Ratings
Symbol
PHM5601
Unit
Drain-Source Voltage (VGS=0V)
VDSS
Gate - Source Voltage
VGSS
Continuous Drain Current
Duty=50%
D.C.
ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Operating Junction Temperature Range
Tjw
Storage Temperature Range
Tstg
Isolation Voltage Terminals to Base AC, 1 min.)
VISO
Module Base to Heatsink
Mounting Torque Gate Terminals
FTOR
Bus Bar to Main Terminals
150
+/ - 20
560 (Tc=25°C)
440 (Tc=25°C)
1,120 Tc=25°C)
1,780 Tc=25°C)
-40 to +150
-40 to +125
2,500
3.0
M4
1.4
M8
10.5
V
V
A
A
W
°C
°C
V
N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IDSS
IGSS
VGS(th)
rDS(on)
VDS(on)
gfs
Cies
Coss
Crss
VDS=VDSS,VGS=0V
VGS=+/- 20V,VDS=0V
VDS=VGS, ID=16mA
VGS=10V, ID=560A
VGS=10V, ID=560A
VDS=15V, ID=560A
VDS=10V,VGS=0V,f=1MHz
-
-
3.2 mA
-
-
3.2
µA
1.0
2.0
3.2
V
-
1.6
2.0 m-ohm
-
1.0
1.2
V
-
-
-
S
-
110
-
nF
-
13
-
nF
-
13
-
nF
Rise Time
Turn-On Delay Time
Fall Time
Turn-Off Delay Time
tr
VDD= 80V
td(on) ID=280A
tf
VGS= -5V, +10V
td(off)
RG= 1.2 ohm
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
-
400
-
-
-
380
170
-
-
ns
-
1,100
-
Min. Typ. Max. Unit
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
IS
Duty=50%.
D.C. (Terminal Temperature=80°C
ISM
-
VSD
IS=560A
trr
IS=560A, -dis/dt=1,100A/µs
-
-
560
450
A
-
-
1,120
A
-
1.6
2.0
V
-
130
-
ns
THERMAL CHRACTERISTICS
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Thermal Resistance, Junction to Case
Rth(j-c)
-
Thermal Resistance, Case to Heatsink
Rth(c-f)
Mounting surface flat, smooth, and greased
-
-
-
0.07
0.035
°C/W