PD10M440H Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – MOSFET MODULE DUAL 85A 450V/500V

MOSFET MODULE Dual 85A 450V/500V
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Circuit
PD10M441H / PD10M440H
OUTLINE DRAWING
Dimension(mm)
108.0
MAXMUM RATINGS
Approximate Weight : 220g
Ratings
Symbol
PD10M441H
PD10M440H
Unit
Drain-Source Voltage (VGS=0V)
VDSS
Gate - Source Voltage
VGSS
Continuous Drain Current
Duty=50%
D.C.
ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Operating Junction Temperature Range
Tjw
Storage Temperature Range
Tstg
Isolation Voltage Terminals to Base AC, 1 min.)
VISO
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
FTOR
450
500
+/ - 20
85 (Tc=25°C)
60 (Tc=25°C)
170 Tc=25°C)
730 Tc=25°C)
-40 to +150
-40 to +125
2000
3.0
2.0
V
V
A
A
W
°C
°C
V
N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Zero Gate Voltage Drain Current
Gate-Source Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IDSS
VGS(th)
IGSS
rDS(on)
VDS(on)
gfs
Cies
Coss
Crss
VDS=VDSS,VGS=0V
Tj=125°C, VDS=VDSS,VGS=0V
VDS=VGS, ID=1mA
VGS=+/- 20V,VDS=0V
VGS=10V, ID=40A
VGS=10V, ID=40A
VDS=15V, ID=40A
VDS=25V,VGS=0V,f=1MHz
-
-
-
-
1.0
4.0
mA
2.0
3.1
4.0
V
-
-
1.0
µA
-
75
85 m-ohm
-
3.5
3.9
V
-
65
-
S
-
13
-
nF
-
2.2
-
nF
-
0.45
-
nF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD= 1/2VDSS
ID=40A
VGS= -5V, +10V
RG= 7ohm
-
140
-
-
-
110
300
-
-
ns
-
50
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
IS
D.C.
ISM
-
VSD
IS=85A
trr
Qr
IS=85A, -dis/dt=100A/µs
-
-
60
A
-
-
170
A
-
-
2.0
V
-
100
-
ns
-
0.15
-
µC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Thermal Resistance, Junction to Case
Rth(j-c)
MOS FET
Diode
-
-
Thermal Resistance, Case to Heatsink
Rth(c-f)
Mounting surface flat, smooth, and greased
-
-
0.171
-
1.2 °C/W
-
0.1