PB10S1 Datasheet, PDF (1/2 Pages) Nihon Inter Electronics Corporation – SINGLE - PHASE SILICON BRIDGE RECTIFIER

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DIODE Type:PB10S1,2,4,6
SINGLE – PHASE SILICON BRIDGE RECTIFIER
FEATURES
* Surge Overload Rating : 150 Amperes Peak
* Low Forward Voltage Drop
* Mounting Position : Any
OUTLINE DRAWING
Maximum Ratings
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Approx Net Weight:8.5g
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
Surge Forward Current Per 1 Arm
Operating JunctionTemperature Range
Storage Temperature Range
Insuration Withstand Voltage
Mounting torque
Symbol PB10S1 PB10S2 PB10S4 PB10S6
VRRM
VRSM
IO
IFSM
Tjw
Tstg
Viso
Fw
100
200
400
600
120
240
480
680
10 Tc=102°C, With 200x200x1.5mm,Al-Fin
3.7 Ta=40°C, Without Fin
150
50 Hz Half Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
1500 Terminal to Base, AC 1min.ç
0.5 Recommended value
Unit
V
V
A
A
°C
°C
V
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current Per 1 Arm
Peak Forward Voltage Per 1 Arm
Thermal Resistance
Symbol
Conditions
IRM Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 5A
Rth(j-c) Junction to Case(total)
Min.
-
-
-
Typ.
-
-
-
Max. Unit
5 µA
1.0 V
3.5 °C/W