PAT2008 Datasheet, PDF (1/5 Pages) Nihon Inter Electronics Corporation – THYRISTOR MODULE

THYRISTOR MODULE
200A / 800Vç
ç
PAT2008 PAH2008
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PAT
PAH
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Approx Net Weight:500g
Grade
PAT/PAH2008
800
900
800
900
Unit
V
V
Parameter
Average Rectified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
Value per 1 Arm
IO(AV)
IT(RMS)
ITSM
I²t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
50Hz Half Sine Wave condition
Tc=65°C
200
314
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
4000
2msec to 10msec
8000
VD=2/3VDRM, ITM=2^•IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
100
5
1
2
10
5
-40 to +125
-40 to +125
Base Plate to Terminals, AC1min
2000
M6 Screw
2.5 to 3.5
M8 Screw
9.0 to 10.0
Unit
A
A
A
A²s
A/µs
W
W
A
V
V
°C
°C
V
N•m
ç